Germany – Laboratory, optical and precision equipments (excl. glasses) – OV_LK_08-26-0654 Cz-Züchtungsanlage-Oxide-2027

Supply "free site", installation and commissioning of a Cz growth system for growing oxide single crystals. Furthermore: provision of documentation, acceptance (factory and final acceptance), service in case of malfunction. The system enables the growth of oxide single crystals, particularly Ga₂O₃, from the melt using the Czochralski method. Crystal diameters of at least 50 mm (2 inches) and a maximum of 100 mm (4 inches) as well as a crystal weight of up to 5 kg are achieved. The crystal growth process takes place in a double-walled, water-cooled chamber made of stainless steel, in which different gas atmospheres can be set by prior evacuation and subsequent filling with gases. The process is carried out at a pressure slightly above atmospheric pressure (approx. 20-50 mbar overpressure) either in a static or a flowing atmosphere. The starting material in the form of powder, granulate or melt (e.g. Ga₂O₃) is located in a noble metal crucible (e.g. iridium), which is heated directly by a high-frequency induction coil located inside the stainless steel chamber. The crystallization process begins at a seed crystal, which is dipped from above into the melt. To form a volume crystal, the crystallized material is slowly pulled out of the melt under rotation with adjustable pulling speeds.